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Volumn 14, Issue 6, 2002, Pages 792-794

High extinction ratio and saturation power traveling-wave electroabsorption modulator

Author keywords

Electroabsorption; High extinction ration; High saturation power; High speed; Low driving voltage; Modulator; Traveling wave

Indexed keywords

ELECTRIC FIELD EFFECTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MICROWAVE DEVICES; QUANTUM THEORY; REACTIVE ION ETCHING; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES; WAVEGUIDES;

EID: 0036611244     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2002.1003095     Document Type: Article
Times cited : (76)

References (15)
  • 3
    • 0030420269 scopus 로고    scopus 로고
    • Strained InGaAsP/InGaAsP/InAsP multi-quantum well structure for polarization insensitive electroabsorption modulator with high power saturation
    • Dec.
    • (1996) Appl. Phys. Lett. , vol.69 , pp. 4131-4132
    • Ougazzaden, A.1    Devaux, F.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.