Strained InGaAsP/InGaAsP/InAsP multi-quantum well structure for polarization insensitive electroabsorption modulator with high power saturation

Applied Physics Letters

Volumn 69, Issue 27, 1996, Pages 4131-4132

  Ougazzaden, A ^a   Devaux, F ^a  

^a ORANGE LABS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ELECTRIC FIELD EFFECTS; ELECTRON TRANSITIONS; ENERGY GAP; FIBER OPTICS; FREQUENCY RESPONSE; LIGHT POLARIZATION; LIGHT TRANSMISSION; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SENSITIVITY ANALYSIS;

BAND GAP ENGINEERING; ELECTROABSORPTION MODULATORS; POLARIZATION SENSITIVITY; WAVELENGTHS;

LIGHT MODULATORS;

EID: 0030420269     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117836     Document Type: Article

References (5)

1. S. Chelles, R. Ferreira, P. Voisin, A. Ougazzaden, M. Allovon, and A. Carenco, Appl. Phys. Lett. 64, (1994).
2. F. Devaux, S. Chelles, A. Ougazzaden, A. Mircea, M. Carre, F. Huet, A. Carenco, Y. Sorel, and J. F. Kerdilles, IEEE Photonics Technol. Lett. 6, 1203 (1994).
3. K. Yoshino, K. Wakita, I. Koataka, S. Kondo, and Y. Noguchi, Proc. CLEO, 1995, p. 51.
4. T. H. Wood, J. Z. Pastalan, C. A. Burrus,Jr., B. C. Johnson, B. I. Miller, J. L. deMiguel, U. Koren, and M. G. Young, Appl. Phys. Lett. 57, (1990).
5. F. Devaux, S. Chelles, A. Ougazzaden, A. Mircea, and J. C. Harmand, Semicond. Sci. Technol. 10, 887 (1995).