Enhanced spontaneous emission in hydrogen-plasma-passivated AlGaAs/GaAs vertical-cavity surface-emitting laser structures grown on Si substrate

Electronics Letters

Volumn 36, Issue 17, 2000, Pages 1462-1464

  Wang, G ^a   Soga, T ^a   Egawa, T ^a   Jimbo, T ^a   Umeno, M ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; LIGHT EMISSION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SPONTANEOUS EMISSION; SUBSTRATES;

MINORITY CARRIER LIFETIME; VERTICAL CAVITY SURFACE EMITTING LASERS;

QUANTUM WELL LASERS;

EID: 0034246363     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20001055     Document Type: Article

References (4)

1. MURATA, Y., NAKANISHI, N., EGAWA, T., JIMBO, T., and UMENO, M.: 'GaAs-based vertical-cavity surface-emitting laser on Si substrate by metalorganic chemical vapor deposition', Jpn. J. Appl. Phys., 1996, 35, (12B), pp. L1631-L1633
2. JAGANNATH, C., ZEMON, S., NORRIS, P., and ELMAN, B.S.: 'Biaxially stressed excitons in GaAs/AlGaAs quantum wells grown on Si substrates', Appl. Phys. Lett., 1987, 51, (16), pp. 1268-1270
3. HANAMAKI, Y., AKIYAMA, H., and SHIRAKI, Y.: 'Spontaneous emission alteration in InGaAs/GaAs vertical cavity surface emitting laser (VCSEL) structures', Semicond. Sci. Technol., 1999, 14, pp. 797-803
4. WANG, G., ZHAO, G.Y., SOGA, T., JIMBO, T., and UMENO, M.: 'Effects of H plasma passivation on the optical and electrical properties of GaAs-on-Si', Jpn. J. Appl. Phys., 1998, 37, (11A), pp. L1280-L1282