Formation of porous grain boundaries in polycrystalline silicon thin films

Journal of Applied Physics

Volumn 91, Issue 11, 2002, Pages 9408-9413

  Kageyama, Yasuyuki ^a   Murase, Yoshie ^a   Tsuchiya, Toshiyuki ^a   Funabashi, Hirofumi ^a   Sakata, Jiro ^a  

^a Rd Management Section   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON FILM; FIELD EMISSION SECONDARY ELECTRON MICROSCOPE; FORMATION MECHANISM; PHOSPHORUS DIFFUSION; PHOSPHORUS DOPING; POLY-SI THIN FILM; POLYCRYSTALLINE SILICON (POLY-SI); POLYCRYSTALLINE SILICON THIN FILM; POROUS MICROSTRUCTURE; POST ANNEALING; PRE-DEPOSITION; SILICON ATOMS; TRANSMISSION ELECTRON MICROSCOPE;

HYDROFLUORIC ACID; MICROSTRUCTURE; PHOSPHORUS; POLYSILICON; SEMICONDUCTOR DOPING; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

GRAIN BOUNDARIES;

EID: 0036607492     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1476088     Document Type: Article

References (21)

1. R. T. Howe, J. Vac. Sci. Technol. B 6, 1809 (1988). jvb JVTBD9 0734-211X
2. W. C. Tang, T.-C. H. Nguyen, and R. T. Howe, Sens. Actuators A 20, 25 (1989). sea SEACDX 0250-6874
3. A. P. Lee, P. B. Ljung, and A. P. Pisano, Proc. IEEE Workshop on Microelectromech. Syst., Travemünde, Germany, Feb. 1992, pp. 177-182.
4. J. Bernstein, S. Cho, A. T. King, A. Kourepenis, P. Maciel, and M. Weinberg, Proc. IEEE Workshop on Microelectromech. Syst., Fort Lauderdale, FL, Feb. 1993, pp. 143-148.
5. R. Legtenberg and H. A. C. Tilmans, Sens. Actuators 45, 57 (1994). sea SEACDX 0250-6874
6. K. S. Lebouitz, R. T. Howe, and A. P. Pisano, Proceedings of the 8th International Conference on Solid-States Sensor and Actuators (Transducers '95), Stockholm, Sweden, June 1995, pp. 224-227.
7. K. S. Lebouitz, A. Mazaheri, R. T. Howe, and A. P. Pisano, Proc. IEEE Workshop on Microelectromech. Syst., Orlando, FL, Jan. 1999, pp. 470-475.
8. T. Tsuchiya, Y. Kageyama, H. Funabashi, and J. Sakata, Proceedings of the International Conference on Solid-States Sensors and Actuators (Transducers '99), Sendai, Japan, June 1999, pp. 976-979.
9. Y. Cho, B. M. Kwak, A. P. Pisano, and R. T. Howe, Proc. IEEE Workshop on Microelectromech. Syst., Fort Lauderdale, FL, Feb. 1993, pp. 93-98.
10. T. Tsuchiya, Y. Kageyama, H. Funabashi, and J. Sakata, Tech. Digest of the 17th Sensor Symposium 2000, Kawasaki, Japan, 30-31 May 2000, pp. 245-248.
11. K. Ikeda, H. Kuwayama, T. Kobayashi, T. Watanabe, T. Nishikawa, T. Yoshida, and K. Harada, Sens. Actuators A A21-A23, 146 (1990). sac SAAPEB 0924-4247
12. H. Guckel, J. J. Sniegowski, T. R. Christenson, and F. Raissi, Sens. Actuators A A21-A23, 346 (1990). sac SAAPEB 0924-4247
13. D. J. Monk, D. S. Soane, and R. T. Howe, Proceedings of the International Conference on Solid-States Sensor and Actuators (Transducers '91), San Francisco, CA, 24-27 June 1991, pp. 224-227.
14. D. J. Monk, D. S. Soane, and R. T. Howe, J. Electrochem. Soc. 141, 264 (1994). jes JESOAN 0013-4651
15. T. A. Lober and R. T. Howe, Proceedings of IEEE Solid-States Sensors and Actuators Workshop, Hilton Head Island, SC, 1988, pp. 59-62.
16. J. A. Walker, K. J. Gabriel, and M. Mehregany, Proc. IEEE Workshop on Microelectromech. Syst., Napa Valley, CA, Feb. 1990, pp. 56-60.
17. D. J. Monk, P. Krulevitch, R. T. Howe, and G. C. Johnson, Mater. Res. Soc. Symp. Proc. 308, 641 (1993). mrs MRSPDH 0272-9172
18. Y. Kageyama, T. Tsuchiya, H. Funabashi, and J. Sakata, Proceedings of the International Conference on Solid-States Sensors and Actuators (Transducers '99), Sendai, Japan, June 1999, pp. 340-343.
19. Y. Kageyama, T. Tsuchiya, H. Funabashi, and J. Sakata, J. Vac. Sci. Technol. A 18, 1853 (2000). jva JVTAD6 0734-2101
20. E. K. Demirlioglu, Ph.D. thesis, TR No. G502-10, Stanford University, California, 1988.
21. J. H. Rose and R. Gronsky, Appl. Phys. Lett. 41, 993 (1982). apl APPLAB 0003-6951