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Volumn 35, Issue 2 SUPPL. B, 1996, Pages 1041-1044
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Optical cavity based on porous silicon superlattice technology
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Author keywords
Photoluminescence; Photonic device; Porous silicon; Superlattice; Vertical cavity
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Indexed keywords
CURRENT DENSITY;
LASERS;
LIGHT EMISSION;
MIRRORS;
MULTILAYERS;
OPTICAL RESONATORS;
PHOTOLUMINESCENCE;
SCANNING ELECTRON MICROSCOPY;
SEMICONDUCTOR DEVICE MANUFACTURE;
SEMICONDUCTOR DEVICE STRUCTURES;
SEMICONDUCTOR SUPERLATTICES;
THIN FILMS;
ANODIZATION CURRENT DENSITY;
FABRY-PEROT RESONATORS;
INTERFERENCE MODE SPACING;
OPTICAL CAVITY;
PHOTONIC DEVICE;
POROUS SILICON SUPERLATTICE TECHNOLOGY;
ULTRAVIOLET LASERS;
VERTICAL CAVITY;
POROUS SILICON;
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EID: 0030080451
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.35.1041 Document Type: Article |
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Times cited : (28)
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References (9)
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