Millimeter wave MMIC low noise amplifiers using a 0.15 μm commercial pHEMT process

ETRI Journal

Volumn 24, Issue 3, 2002, Pages 190-196

  Jang, Byung Jun ^a   Yom, In Bok ^a   Lee, Seong Pal ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; GAIN MEASUREMENT; HIGH ELECTRON MOBILITY TRANSISTORS; INTEGRATED CIRCUIT LAYOUT; MILLIMETER WAVE DEVICES; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING GALLIUM ARSENIDE; SPURIOUS SIGNAL NOISE;

ACTIVE DEVICE MODEL; ELECTROMAGNETIC SIMULATION; LOW NOISE AMPLIFIERS;

MICROWAVE AMPLIFIERS;

EID: 0036603352     PISSN: 12256463     EISSN: None     Source Type: Journal    
DOI: 10.4218/etrij.02.0102.0302     Document Type: Article

References (13)

1. Recent MMW technology development and its military and commercial applications
2. High reliability non-hermetic 0.15μm GaAs pseudomorphic HEMT MMIC amplifiers
3. Comparison of coplanar 60-GHz low-noise amplifiers based on a GaAs PM-HEMT technology
4. Millimeter-wave HEMT noise models verified thru V-band
5. A product engineering exercise in 6-sigma manufacturability: Redesign of a pHEMT wide-band LNA
6. Forecasting methods for MMIC RF yield
7. A new approach to FET model scaling and MMIC design based on electromagnetic analysis
8. Accurate analysis of millimeter-wave MMIC power amplifier using distributed FET model
9. A high gain, low power MMIC LNA for Ka-band using InP HEMTs
10. A 60GHz-band low noise HJFET amplifier module for wireless LAN applications
11. A high performance and low DC power V-band MMIC LNA using 0.1μm InGaAs/InAlAs/InP HEMT technology
12. High performance, high yield millimeter-wave MMIC LNAs using InP HEMTs