Intermodulation analysis of dual-gate FET mixers

IEEE Transactions on Microwave Theory and Techniques

Volumn 50, Issue 6, 2002, Pages 1544-1555

  Kim, Junghyun ^a,b   Kwon, Youngwoo ^a,b  

^a IEEE   (South Korea)

^b Seoul National University   (South Korea)

Author keywords

Dual gate FET; HEMT; Intermodulation; Mixer; MMIC

Indexed keywords

INTERMODULATION DISTORTIONS (IMD);

COMPUTER SIMULATION; ELECTRIC CONDUCTANCE; ELECTRIC CURRENTS; FIELD EFFECT TRANSISTORS; INTERMODULATION; NONLINEAR DISTORTION; OPTIMIZATION; OSCILLATORS (ELECTRONIC); SIGNAL PROCESSING;

MIXER CIRCUITS;

EID: 0036601952     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2002.1006416     Document Type: Article

References (19)

1. Two-tone intermodulation in diode mixers
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5. A symmetrical nonlinear HFET/MESFET model suitable for intermodulation analysis of amplifiers and resistive mixers
6. Nonlinear models for the intermodulation analysis of FET mixers
7. A miniaturized W-band monolithic dual-gate InAlAs/InGaAs HEMT mixer
8. Low power HFET down converter MMIC's for wireless communication applications
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16. Accurate simulation of GaAs MESFET's intermodulation distortion using a new drain-source current model
17. Dual-gate MESFET mixer
18. Phasor diagram analysis of millimeter-wave HEMT mixers