1.9 GHz single-chip RF front-end GaAs MMIC with low-distortion cascode FET mixer for personal handy-phone system terminals

IEEE MTT-S International Microwave Symposium Digest

Volumn 1, Issue , 1998, Pages 171-174

  Nakayama, Masatoshi ^a   Horiguchi, Ken ichi ^a   Yamamoto, Kazuya ^a   Yoshii, Yutaka ^a   Sugiyama, Shigeru ^a   Suematsu, Norihiro ^a   Takagi, Tadashi ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC DISTORTION; MICROPROCESSOR CHIPS; MIXER CIRCUITS; PERSONAL COMMUNICATION SYSTEMS; POWER AMPLIFIERS; SEMICONDUCTING GALLIUM ARSENIDE; SPURIOUS SIGNAL NOISE; TELEPHONE SYSTEMS;

LOW NOISE AMPLIFIERS (LNA); PERSONAL HANDY PHONE SYSTEMS (PHS);

MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

EID: 0031630372     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)