Growth and doping of SiC-thin films on low-stress, amorphous Si3N4/Si substrates for robust microelectromechanical systems applications

Journal of Electronic Materials

Volumn 31, Issue 5, 2002, Pages 361-365

  Cheng, L ^a   Pan, M ^a   Scofield, J ^b   Steckl, A J ^a  

^a University of Cincinnati   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

3MS; CVD; LPCVD; MEMS; SiC

Indexed keywords

AMORPHOUS SILICON; CARRIER CONCENTRATION; CHEMICAL VAPOR DEPOSITION; DOPING (ADDITIVES); FILM GROWTH; HALL EFFECT; INTERFACES (MATERIALS); MICROELECTROMECHANICAL DEVICES; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

LOW PRESSURE CHEMICAL VAPOR DEPOSITION (LPCVD);

SILICON CARBIDE;

EID: 0036576073     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-002-0083-x     Document Type: Article

References (6)

1. SIC materials and devices