Photonic integration of InGaAs-InGaAsP laser using low energy arsenic implantation induced disordering for quantum well intermixing

CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics

Volumn 3, Issue , 1999, Pages 1030-1031

  Lim, H S ^a   Ooi, B S ^a   Lam, Y L ^a   Chan, Y C ^a   Aimez, V ^b   Beauvais, J ^b   Beerens, J ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b UNIVERSITÉ DE SHERBROOKE   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; ELECTROMAGNETIC WAVE ABSORPTION; IMPURITIES; LIGHT ABSORPTION; MIXING; PHOTONIC INTEGRATION TECHNOLOGY; PHOTONICS; QUANTUM WELL LASERS; SEMICONDUCTING INDIUM; ANNEALING; EMISSION SPECTROSCOPY; ION IMPLANTATION; LASER RESONATORS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; THERMODYNAMIC STABILITY;

IMPLANTATION ENERGIES; LOW-ENERGY ARSENIC IMPLANTATION; NEUTRAL IMPURITIES; PHOTONIC INTEGRATED CIRCUITS; PHOTONIC INTEGRATIONS; PROCESS DEVELOPMENT; QUANTUM WELL INTERMIXING; SHALLOW IMPLANTATION;

SEMICONDUCTOR QUANTUM WELLS; INTEGRATED OPTOELECTRONICS;

ARSENIC IMPLANTATION DISORDERING; DIFFERENTIAL WAVELENGTH SHIFTS; PHOTONIC INTEGRATION; QUANTUM WELL INTERMIXING;

EID: 0033336686     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/CLEOPR.1999.817956     Document Type: Conference Paper

References (5)

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