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Volumn 82, Issue 5, 2002, Pages 313-321
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Band-edge states in ultrasmall silicon quantum boxes: Calculations of electronic states and oscillator strengths
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Author keywords
[No Author keywords available]
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Indexed keywords
BRILLOUIN SCATTERING;
CALCULATIONS;
HYDROGEN;
LIGHT ABSORPTION;
OSCILLATORS (ELECTRONIC);
PHONONS;
PHOTOLUMINESCENCE;
SILICON;
BAND EDGE STATES;
BANDGAP;
CONDUCTION BAND MINIMUM;
ELECTRONIC STATES;
HUCKEL-TYPE NONORTHOGONAL TIGHT BINDING METHOD;
MOMENTUM CONSERVATION LAW;
OPTICAL TRANSITION;
OSCILLATOR STRENGTHS;
ULTRASMALL SILICON QUANTUM BOXES;
VALENCE BAND MAXIMUM;
ELECTRONIC STRUCTURE;
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EID: 0036574486
PISSN: 09500839
EISSN: None
Source Type: Journal
DOI: 10.1080/09500830210124041 Document Type: Article |
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Times cited : (6)
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References (12)
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