Analysis of the admittance-frequency and capacitance-voltage of dense SnO 2ṡCoO-based varistor ceramics

Journal of Applied Physics

Volumn 91, Issue 9, 2002, Pages 6007-6014

  Bueno, P R ^a   Oliveira, M M ^a   Bacelar Junior, W K ^a   Leite, E R ^a   Longo, E ^a   Garcia Belmonte, G ^b   Bisquert, J ^b  

^a FEDERAL UNIVERSITY OF SÃO CARLOS   (Brazil)

^b UNIVERSITAT JAUME I   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; CAPACITANCE VOLTAGE; DEEP TRAPS; DENSITY OF STATE; GRAIN BOUNDARY INTERFACE; NON-LINEAR CURRENT-VOLTAGE CHARACTERISTICS; NONLINEAR COEFFICIENT; POLYCRYSTALLINE CERAMICS; RELAXATION PEAK; VARISTOR CERAMICS;

CERAMIC MATERIALS; COBALT COMPOUNDS; CURRENT VOLTAGE CHARACTERISTICS; GRAIN BOUNDARIES; INTERFACE STATES; LANTHANUM OXIDES; TIN;

NONLINEAR ANALYSIS;

EID: 0036571947     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1455685     Document Type: Article

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