Variations in I-V characteristics of oxide semiconductors induced by oxidizing gases

Sensors and Actuators, B: Chemical

Volumn 35, Issue 1-3, 1996, Pages 62-67

  Egashira, Makoto ^a   Shimizu, Yasuhiro ^a   Takao, Yuji ^a   Sako, Shuichi ^a  

^a NAGASAKI UNIVERSITY   (Japan)

Author keywords

Breakdown voltage; Non linear I V characteristics; Oxide semiconductors; Oxidizing gas; Tin dioxide; Zinc oxide

Indexed keywords

CHEMISORPTION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENT MEASUREMENT; GRAIN BOUNDARIES; POROUS MATERIALS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING TIN COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR MATERIALS; VARISTORS; VOLTAGE MEASUREMENT; ZINC OXIDE;

OXIDE SEMICONDUCTORS; OXIDIZING GASES; TIN DIOXIDE; VOLTAGE BREAKDOWN;

CHEMICAL SENSORS;

EID: 0030235521     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-4005(96)02015-1     Document Type: Article

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