Direct nano-wiring carbon nanotube using growth barrier: A possible mechanism of selective lateral growth

Journal of Applied Physics

Volumn 91, Issue 9, 2002, Pages 6044-6050

  Lee, Yun Hi ^a   Jang, Yoon Taek ^a   Choi, Chang Hoon ^a   Kim, Eun Kyu ^a   Ju, Byeong Kwon ^a   Kim, Dong Ho ^b   Lee, Chang Woo ^b   Yoon, Sang Soo ^c  

^a Korea Institute of Science and Technology   (South Korea)

^b Yeungnam University   (South Korea)

^c LG Electronics Inc   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CATALYTIC METALS; CONVENTIONAL PHOTOLITHOGRAPHY; CRYSTALLOGRAPHIC CHARACTERISTICS; ELECTRONIC APPLICATION; FABRICATION TECHNIQUE; GROWTH PROCESS; HIGH INTEGRATION LEVEL; INSULATING LAYERS; LATERAL GROWTH; MOLECULAR DEVICE; NANO-WIRING; NANOMACHINES; NANOMACHINING; NI CATALYSTS; SI-BASED; VERTICAL DIRECTION; VERTICAL GROWTH; Y SHAPE;

CARBON NANOTUBES; PHOTOLITHOGRAPHY; TRACE ELEMENTS;

NIOBIUM;

EID: 0036571907     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1466523     Document Type: Article

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