Optimization of SiON film compositions for encapsulation of refractory metal gate GaAs metal-semiconductor field effect transistor

Journal of the Electrochemical Society

Volumn 145, Issue 1, 1998, Pages 323-328

  Ohshika, Katsushi ^a   Yanazawa, Hiroshi ^a   Kuroda, Jun ^a   Kayama, Satoshi ^a   Sasaki, Yukio ^b  

^a HITACHI LTD   (Japan)

^b HITACHI CABLE LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CHEMICAL VAPOR DEPOSITION; COMPOSITION; ENCAPSULATION; INTERFACES (MATERIALS); PLASMA APPLICATIONS; REFRACTIVE INDEX; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE;

ANNEAL ENCAPSULATION; SCHOTTKY DIODE IDEALITY FACTOR;

MOSFET DEVICES;

EID: 0031648039     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1838253     Document Type: Article

References (7)

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