Dynamic Monte Carlo simulation for SIMS depth profiling of delta-doped layer

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 153, Issue 1-4, 1999, Pages 429-435

  Kang, H J ^a   Kim, W S ^a   Moon, D W ^b   Lee, H Y ^c   Kang, S T ^c   Shimizu, R ^d  

^a Chungbuk National University   (South Korea)

^b Korea Research Institute of Standards and Science   (South Korea)

^c Yonsei University Wonju   (South Korea)

^d OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ION BEAMS; MONTE CARLO METHODS; SECONDARY ION MASS SPECTROMETRY; SILICA; SILICON; TANTALUM COMPOUNDS; THIN FILMS;

DEPTH PROFILING; INCIDENT ION ENERGY;

MULTILAYERS;

EID: 0033516051     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)01021-0     Document Type: Article

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