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Volumn 20, Issue 3, 2002, Pages 1132-1134
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Growth and characterization of InAs on (100) InP ultrathin single quantum wells using tertiarybutylarsine and tertiarybutylphosphine
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Author keywords
[No Author keywords available]
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Indexed keywords
ABSORPTION SPECTROSCOPY;
ELECTRON RESONANCE;
ELECTRON TRANSITIONS;
EXCITONS;
METALLORGANIC VAPOR PHASE EPITAXY;
PHOTOLUMINESCENCE;
SEMICONDUCTING INDIUM PHOSPHIDE;
SEMICONDUCTING ORGANIC COMPOUNDS;
SEMICONDUCTOR GROWTH;
SEMICONDUCTOR QUANTUM WELLS;
SUBSTRATES;
X RAY DIFFRACTION ANALYSIS;
ELECTRON-HOLE TRANSITION;
EXCITONIC RESONANCE;
HIGH RESOLUTION X RAY DIFFRACTION;
INDIUM ARSENIDE;
PHOTOLUMINESCENCE EXCITATION;
PHOTOLUMINESCENCE MEASUREMENT;
TERTIARYBUTYLARSINE;
TERTIARYBUTYLPHOSPHINE;
ULTRATHIN SINGLE QUANTUM WELL;
SEMICONDUCTING INDIUM COMPOUNDS;
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EID: 0036565092
PISSN: 07342101
EISSN: None
Source Type: Journal
DOI: 10.1116/1.1474412 Document Type: Article |
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Times cited : (7)
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References (18)
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