Characterization and modeling of silicon CMOS transistor operation at low temperature

Journal De Physique. IV : JP

Volumn 6, Issue 3, 1996, Pages 3-9

  Ghibaudo, G ^a   Balestra, F ^a  

^a CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

HOT CARRIERS; LEAKAGE CURRENTS; LOW TEMPERATURE OPERATIONS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; TRANSISTORS;

CARRIER MOBILITY LAW; SATURATION VELOCITY; SHORT CHANNEL EFFECTS;

CMOS INTEGRATED CIRCUITS;

EID: 0030124689     PISSN: 11554339     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1051/jp4:1996301     Document Type: Article

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