Oxidation studies of aluminum-implanted NBD 200 silicon nitride

Journal of the American Ceramic Society

Volumn 85, Issue 4, 2002, Pages 865-872

  Mukundhan, Priya ^a,c   Du, Henry H ^a,c   Withrow, Stephen P ^b  

^a STEVENS INSTITUTE OF TECHNOLOGY   (United States)

^b OAK RIDGE NATIONAL LABORATORY   (United States)

^c AMERICAN CERAMIC SOCIETY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ALUMINUM; DIFFUSION; ION IMPLANTATION; OXIDATION; OXIDATION RESISTANCE;

RATE LAW;

SILICON NITRIDE;

EID: 0036544970     PISSN: 00027820     EISSN: None     Source Type: Journal    
DOI: 10.1111/j.1151-2916.2002.tb00185.x     Document Type: Article

References (21)

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4. The rate-controlling process in the oxidation of hot pressed silicon nitride
5. 2-MgO
6. Thermodynamic mechanism for cation diffusion through an intergranular phase: Application to environmental reaction with nitrogen ceramics
7. 4
8. 4 in the range 1300°-1500°C
9. 4 hot-pressed with various sintering aids
10. Silicon nitride oxidation/re-oxidation
11. Oxidation behavior of NBD 200 silicon nitride ceramics
12. Reduction of sodium-accelerated oxidation of silicon nitride ceramics by aluminum implantation
13. Improved oxidation resistance of silicon nitride by aluminum implantation: I, kinetics and morphology
14. Improved oxidation resistance of silicon nitride by aluminum implantation: II, analysis and optimization
15. Tribochemical polishing of silicon nitride ceramics
16. Effect of trace impurity levels on the viscosity of the vitreous silica
17. The viscosity of vitreous silica
18. 2 glass
19. Alumina as a devitrification inhibitor during sintering of borosilicate glass powders