Improved oxidation resistance of silicon nitride by aluminum implantation: I. Kinetics and oxide characteristics

Journal of the American Ceramic Society

Volumn 83, Issue 1, 2000, Pages 154-60

  Cheong, Yong S ^a   Mukundhan, Priya ^a   Du, Henry H ^a   Withrow, Stephen P ^b  

^a STEVENS INSTITUTE OF TECHNOLOGY   (United States)

^b OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ALUMINUM; CHEMICAL MODIFICATION; HOT ISOSTATIC PRESSING; ION IMPLANTATION; OXIDATION RESISTANCE; OXIDES; OXYGEN; REACTION KINETICS; SILICON NITRIDE; SODIUM COMPOUNDS; VAPORIZATION;

ALUMINUM IMPLANTATION; OXIDATION KINETICS; SODIUM SILICATE;

CERAMIC MATERIALS;

EID: 0033751277     PISSN: 00027820     EISSN: None     Source Type: Journal    
DOI: 10.1111/j.1151-2916.2000.tb01164.x     Document Type: Article

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