Sharp-flat reversible change of top of pyramid in GaAs molecular beam epitaxy on (111)B patterned substrate

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 41, Issue 4 A, 2002, Pages

  Takada, Kan ^a   Ogura, Takayuki ^a,b   Nishinaga, Tatau ^b  

^a UNIVERSITY OF TOKYO   (Japan)

^b MEIJO UNIVERSITY   (Japan)

Author keywords

Intersurface diffusion; Microprobe RHEED SEM MBE; Microstructure; Pyramid; Real time control

Indexed keywords

CRYSTAL MICROSTRUCTURE; DIFFUSION; HIGH ENERGY ELECTRON DIFFRACTION; MOLECULAR BEAM EPITAXY; SCANNING ELECTRON MICROSCOPY;

INTERSURFACE DIFFUSION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0036544488     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.l374     Document Type: Article

References (14)