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Journal of Crystal Growth

Volumn 177, Issue 3-4, 1997, Pages 175-180

Initial growth behaviors of disk-shaped mesas in GaAs molecular beam epitaxy on GaAs(1 1 1)B substrates

(3) Shen, X Q a,b Ren, H W a,c Nishinaga, T a

a UNIVERSITY OF TOKYO (Japan)

b INST OF PHYS AND CHEMICAL RESEARCH (Japan)

c JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

Author keywords

Diffusion; Mesa; Real time observation

Indexed keywords

CRYSTAL GROWTH; DIFFUSION IN SOLIDS; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING ELECTRON MICROSCOPY; SURFACE STRUCTURE; SURFACE TREATMENT; THERMAL EFFECTS;

SURFACE RECONSTRUCTIONS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031164153 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(96)01118-9 Document Type: Article

Times cited : (7)

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