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Physica Status Solidi (A) Applied Research

Volumn 190, Issue 2, 2002, Pages 583-587

Carrier recombination in InAs/GaAs self-assembled quantum dots under resonant excitation conditions

(6) Rudamas, C a,c Martinez Pastor J a Garcia Cristobal A b Roussignol, Ph a Garcia J M a Gonzalez L b

a UNIVERSITY OF VALENCIA (Spain)

b ECOLE NORMALE SUPÉRIEURE (France)

c INSTITUTO DE MICROELECTRÓNICA DE MADRID (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONS; GROUND STATE; MOLECULAR BEAM EPITAXY; PHONONS; PHOTOLUMINESCENCE; SELF ASSEMBLY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; THERMAL EFFECTS;

CARRIER RECOMBINATION; CARRIER RELAXATION; RESONANT PHOTOLUMINESCENCE; SELF ASSEMBLED QUANTUM DOTS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0036544313 PISSN: 00318965 EISSN: None Source Type: Journal
DOI: 10.1002/1521-396X(200204)190:2<583::AID-PSSA583>3.0.CO;2-8 Document Type: Conference Paper

Times cited : (2)

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