Multiexcitonic effects in the carrier dynamics in single quantum dot

Physica Status Solidi (A) Applied Research

Volumn 190, Issue 2, 2002, Pages 589-592

  Sanguinetti, S ^a,d   Kuroda, T ^c   Gurioli, M ^b   Watanabe, K ^a   Gotoh, Y ^b   Minami, F ^a   Koguchi, N ^b  

^a UNIVERSITY OF MILANO BICOCCA   (Italy)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^c NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^d TOKAI UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON EMISSION; EXCITONS; GROUND STATE; MOLECULAR BEAM EPITAXY; MOLECULAR DYNAMICS; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

CARRIER DYNAMICS; MOLECULAR BEAM DROPLET EPITAXY; MULTIEXCITONIC EFFECTS; SINGLE QUANTUM DOT;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0036544035     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200204)190:2<589::AID-PSSA589>3.0.CO;2-L     Document Type: Conference Paper

References (8)