Electroluminescent devices using a high-temperature stable GaN-based phosphor and thick-film dielectric layer

IEEE Transactions on Electron Devices

Volumn 49, Issue 4, 2002, Pages 557-563

  Heikenfeld, Jason ^b   Steckl, Andrew J ^a,b  

^a IEEE   (United States)

^b 705 Engineering Research Center   (United States)

Author keywords

Display; Electroluminescence; GaN; Phosphor; Thick dielectric; Thin film electroluminescence (TFEL)

Indexed keywords

THIN-FILM ELECTROLUMINESCENCE (TFEL);

DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN; GALLIUM NITRIDE; PERMITTIVITY; PHOSPHORS; THICK FILM DEVICES; THIN FILMS;

LUMINESCENT DEVICES;

EID: 0036541446     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.992862     Document Type: Article

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