Modeling the impact of preflushing on CTE in proton irradiated CCD-based detectors

IEEE Transactions on Nuclear Science

Volumn 49, Issue 2, 2002, Pages 559-567

  Philbrick, R H ^a  

^a BALL AEROSPACE AND TECHNOLOGIES CORP   (United States)

Author keywords

Charge transfer efficiency (CTE); Charge coupled device (CCD); Preflushing; Proton

Indexed keywords

CHARGE COUPLED DEVICES; COMPUTER SIMULATION; COMPUTER SOFTWARE; ELECTRODES; MATHEMATICAL MODELS; OPTICAL TRANSFER FUNCTION; PROTON IRRADIATION; SPECTROMETERS;

IMAGE DISTORTION;

PARTICLE DETECTORS;

EID: 0036541302     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2002.1003673     Document Type: Article

References (13)

1. The effects of proton damage on charge-coupled devices
2. Displacement damage effects in mixed particle environments for shielded spacecraft CCD's
3. Proton-induced charge transfer degradation in CCD's for near-room temperature applications
4. Proton effects in charge-coupled devices
5. Monte-Carlo model for describing charge transfer in irradiated CCD's
6. FRESIP: A mission to determine the character and frequency of extra-solar planets around solar-like stars
7. The effects of bulk traps on the performance of bulk channel charge-coupled devices
8. The radiation damage performance of Marconi CCD's
9. A model for charge transfer in buried-channel charge-coupled devices at low temperature
10. A comparison of Monte Carlo and analytic treatments of displacement damage in Si microvolumtes