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Journal of Non-Crystalline Solids

Volumn 299-302, Issue PART 1, 2002, Pages 699-703

Improvement of 1.54 μm luminescence in erbium-doped a-SiOx:H alloys

(7) Terukov, Eug I a Undalov, Yu K a Kudoyarova, V Kh a Koughia, K V a Kleider, J P a Gueunier, M E a Meaudre, R a

a IOFFE INSTITUTE (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; DEGRADATION; ERBIUM; MAGNETRON SPUTTERING; PHOTOLUMINESCENCE; SEMICONDUCTING FILMS; SEMICONDUCTOR DOPING; SILICA;

AMORPHOUS SILICON FILMS; MAGNETRON-ASSISTED SILANE DECOMPOSITION (MASD) TECHNIQUE;

SEMICONDUCTING SILICON;

EID: 0036540551 PISSN: 00223093 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-3093(01)01210-8 Document Type: Conference Paper

Times cited : (6)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.