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Materials Science and Engineering: B

Volumn 81, Issue 1-3, 2001, Pages 71-73

Electronic properties of Erbium doped amorphous silicon

(8) Kleider, J P a Longeaud, C a Meaudre, R b Meaudre, M b Vignoli, S b Koughia, K V c Terukov, E I c Konkov, O I c

a UNIV PARIS SUD (France)

b UNIVERSITÉ LYON 1 (France)

c IOFFE INSTITUTE (Russian Federation)

Author keywords

Amorphous silicon; Erbium; Photoluminescence; Transport properties

Indexed keywords

AMORPHOUS FILMS; CARRIER CONCENTRATION; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRON TRANSPORT PROPERTIES; ERBIUM; GLOW DISCHARGES; PHOTOLUMINESCENCE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

DARK CONDUCTIVITY (DC);

AMORPHOUS SILICON;

EID: 0035942401 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-5107(00)00738-8 Document Type: Article

Times cited : (4)

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