Real-time etch-depth measurements of MEMS devices

Journal of Microelectromechanical Systems

Volumn 11, Issue 2, 2002, Pages 111-117

  Bosch Charpenay, Sylvie ^a   Xu, Jiazhan ^a   Haigis, John ^a   Rosenthal, Peter A ^a   Solomon, Peter R ^a   Bustillo, James M ^b,c  

^a On Line Technologies Inc   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c Onix Microsystems   (United States)

Author keywords

HexSil; High aspect ratio MEMS; In situ etch metrology; Infrared spectroscopy; Silicon DRIE

Indexed keywords

FOURIER TRANSFORM INFRARED SPECTROSCOPY; IN SITU PROCESSING; LIGHT REFLECTION; MASKS; OPTICAL VARIABLES MEASUREMENT; PHOTORESISTS; PROCESS CONTROL; REACTIVE ION ETCHING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES;

DEEP REACTIVE ION ETCH; HIGH ASPECT RATIO; IN SITU ETCH METROLOGY; INFRARED REFLECTANCE SPECTRUM; REAL TIME ETCH DEPTH MEASUREMENT;

MICROELECTROMECHANICAL DEVICES;

EID: 0036540049     PISSN: 10577157     EISSN: None     Source Type: Journal    
DOI: 10.1109/84.993445     Document Type: Article

References (12)

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9. Method of anisotropically etching silicon