SCOPUS 정보 검색 플랫폼

Volumn 240, Issue 1-2, 2002, Pages 124-134

Numerical study of the growth conditions in an MOCVD reactor: Application to the epitaxial growth of HgTe

(4) Tena Zaera, R a Mora Sero I a Martinez Tomas C a Munoz Sanjose V a

Author keywords

A1. Computer simulation; A3. Metal organic chemical vapor deposition; A3. Metalorganic vapor phase epitaxy; A3. Organometallic vapor phase epitaxy; B1. Mercury telluride; B2. Semiconducting II VI materials

Indexed keywords

CHEMICAL REACTORS; COMPUTER SIMULATION; HEAT TRANSFER; MASS TRANSFER; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NAVIER STOKES EQUATIONS; PARTIAL PRESSURE; SUBSTRATES; THERMAL EFFECTS;

EPITAXIAL LAYERS;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 0036537661 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(02)00919-3 Document Type: Article

Times cited : (4)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.