Analysis of the CVD in a horizontal reactor II. The epitaxy of CdTe

Journal of Crystal Growth

Volumn 183, Issue 4, 1998, Pages 535-544

  Kuhn, W S ^a,c   Angermeier, D ^a,d   Druilhe, R ^a   Gebhardt, W ^b   Triboulet, R ^a  

^a CNRS   (France)

^b UNIVERSITY OF REGENSBURG   (Germany)

^c Stein Heurtey SA   (France)

^d Faculté de Médecine   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; EPITAXIAL GROWTH; INTERFACES (MATERIALS); MASS TRANSFER; MORPHOLOGY; REACTION KINETICS; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; STOICHIOMETRY; SUBSTRATES; SUPERSATURATION;

CADMIUM TELLURIDE; DIISOPROPYLTELLURIDE; DIMETHYLCADMIUM; HORIZONTAL QUARTZ REACTOR;

SEMICONDUCTING CADMIUM COMPOUNDS;

EID: 0032002570     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(97)00507-1     Document Type: Article

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