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Volumn 91, Issue 7, 2002, Pages 4213-4219
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Growth and interfacial studies of conjugated oligomer films on Si and SiO 2 substrates
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Author keywords
[No Author keywords available]
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Indexed keywords
BANDBENDING;
CHARACTERISTIC PEAKS;
CONJUGATED OLIGOMER;
DEPLETION REGION;
ELECTRIC DIPOLE;
GROWTH OF FILMS;
HIGH PURITY;
INTERFACIAL STUDY;
LAYER-WISE;
N-DOPED;
ORGANIC FILMS;
POLY-P-PHENYLENEVINYLENE;
RECONSTRUCTED SURFACES;
SI (1 1 1);
SI(1 0 0);
THREE COMPONENT;
TWO-MATERIALS;
ULTRAHIGH VACUUM CONDITIONS;
BINDING ENERGY;
ELECTRONIC STRUCTURE;
FILM GROWTH;
FUNCTIONAL GROUPS;
OLIGOMERS;
ORGANIC LIGHT EMITTING DIODES (OLED);
PHOTOELECTRONS;
SILICON;
SILICON WAFERS;
ULTRAVIOLET PHOTOELECTRON SPECTROSCOPY;
X RAY PHOTOELECTRON SPECTROSCOPY;
INTERFACES (MATERIALS);
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EID: 0036536194
PISSN: 00218979
EISSN: None
Source Type: Journal
DOI: 10.1063/1.1456251 Document Type: Article |
Times cited : (34)
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References (24)
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