Nanostructures formation and optical properties of II-VI semiconductor compounds

Journal of Crystal Growth

Volumn 237-239, Issue 1-4 I, 2002, Pages 227-233

  Mariette, H ^a   Marsal, L ^a   Besombes, L ^a   Tinjod, F ^a   Gilles, B ^a   Kheng, K ^a   Rouviere J L ^a  

^a CEA GRENOBLE   (France)

Author keywords

A3. Atomic layer epitaxy; B2. Semiconducting II VI materials

Indexed keywords

DIFFUSION; NANOSTRUCTURED MATERIALS; POSITIVE IONS; REACTION KINETICS; RELAXATION PROCESSES; SELF ASSEMBLY; SEMICONDUCTING CADMIUM TELLURIDE; SEMICONDUCTOR QUANTUM DOTS;

ATOMIC LAYER EPITAXY (ALE);

MOLECULAR BEAM EPITAXY;

EID: 0036531572     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)01911-X     Document Type: Conference Paper

References (29)

1. Sitzungsberichte Akad. Wissenschaften Wien