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Surface Science

Volumn 436, Issue 1, 1999, Pages

Energetics and kinetics for Si-Ge intermixing on Ge-adsorbed hydrogenated si(100) surfaces

(2) Jeong, S a Oshiyama, A a

a UNIVERSITY OF TSUKUBA (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; ATOMS; BINDING ENERGY; EPITAXIAL GROWTH; GERMANIUM; HYDROGENATION; INTERFACES (MATERIALS); INTERFACIAL ENERGY; MATHEMATICAL MODELS; PROBABILITY DENSITY FUNCTION; REACTION KINETICS; SEGREGATION (METALLOGRAPHY);

ATOMISTIC MODEL; HYDROGENATED SILICON SURFACES; INTERMIXING; SURFACE SEGREGATION; TOTAL ENERGY CALCULATIONS;

SEMICONDUCTING SILICON;

EID: 0033366151 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(99)00693-7 Document Type: Article

Times cited : (6)

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