Chemical differences in surface diffusion: si and ge adatoms at the (formula presented) step on the hydrogenated si(100) surface

Physical Review B - Condensed Matter and Materials Physics

Volumn 60, Issue 16, 1999, Pages R11269-R11272

  Jeong, Sukmin ^a   Oshiyama, Atsushi ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000126241     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.60.R11269     Document Type: Article

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