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Journal of Crystal Growth

Volumn 237-239, Issue 1 4 III, 2002, Pages 2107-2111

Stability of detached-grown germanium single crystals

(7) Schweizer, M a Volz, M P a Cobb, S D a Vujisic, L b Motakef, S b Szoke, J c Szofran, F R a

a NASA MARSHALL SPACE FLIGHT CENTER (United States)

b Cape Simulations (United States)

c UNIVERSITY OF MISKOLC (Hungary)

Author keywords

A2. Bridgman technique; A2. Detached Bridgman technique; A2. Single crystal growth; B2. Semiconducting germanium

Indexed keywords

INTERFACES (MATERIALS); SEMICONDUCTING GERMANIUM; SINGLE CRYSTALS; STABILITY;

SINGLE CRYSTAL GROWTH;

CRYSTAL GROWTH;

EID: 0036530641 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)02267-9 Document Type: Article

Times cited : (23)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.