Control of oxygen-atom transport in silicon melt during crystal growth by electromagnetic force

Materials Transactions, JIM

Volumn 41, Issue 8, 2000, Pages 1013-1018

  Watanabe, Masahito ^a   Wang, Wei ^a   Eguchi, Minoru ^a   Hibiya, Taketoshi ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CRYSTAL GROWTH FROM MELT; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; FINITE ELEMENT METHOD; MAGNETIC FIELDS; OXYGEN; TRANSPORT PROPERTIES;

ELECTROMAGNETIC CZOCHRALSKI METHOD; GENERALIZED SIMPLIFIED MARKER AND CELL METHOD; OXYGEN ATOM TRANSPORT;

SILICON;

EID: 0034245416     PISSN: 09161821     EISSN: None     Source Type: Journal    
DOI: 10.2320/matertrans1989.41.1013     Document Type: Article

References (12)