SCOPUS 정보 검색 플랫폼

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 3 A, 2002, Pages 1241-1246

Deep level transient spectroscopy analysis of 10 MeV proton and 1 MeV electron irradiation-induced defects in p-InGaP and InGaP-based solar cells

(6) Khan, Aurangzeb a,e Yamaguchi, Masafumi b Dharmaso, Nothaj c Bourgoin, Jacques d Ando, Koshi b Takamoto, Tatsuya a

a TOYOTA TECHNOLOGICAL INSTITUTE (Japan)

b SORBONNE UNIVERSITÉ (France)

c TOTTORI UNIVERSITY (Japan)

d JAPAN ENERGY CORPORATION (Japan)

e Ohio State University (United States)

Author keywords

Defect reaction; DLTS; InGaP; Minority carrier injection; Radiation induced defects; Solar cells

Indexed keywords

ACTIVATION ENERGY; ANNEALING; DEEP LEVEL TRANSIENT SPECTROSCOPY; DEFECTS; ELECTRON IRRADIATION; FERMI LEVEL; PROTON IRRADIATION; RADIATION DAMAGE; SEMICONDUCTING INDIUM COMPOUNDS;

MINORITY CARRIER INJECTION; RADIATION-INDUCED DEFECTS;

SOLAR CELLS;

EID: 0036509159 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.41.1241 Document Type: Article

Times cited : (26)

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