Recombination centers in electron irradiated GaInP: Application to the degradation of space solar cells

Journal of Crystal Growth

Volumn 210, Issue 1, 2000, Pages 264-267

  Khan, Aurangzeb ^a   Yamaguchi, Masafumi ^a   Takamoto, Tatsuya ^a   De Angelis, N ^b   Bourgoin, J C ^b  

^a TOYOTA TECHNOLOGICAL INSTITUTE   (Japan)

^b SORBONNE UNIVERSITÉ   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP LEVEL TRANSIENT SPECTROSCOPY; DEGRADATION; ELECTRON IRRADIATION; RADIATION EFFECTS; SOLAR CELLS;

GALLIUM INDIUM PHOSPHIDE; RECOMBINATION CENTERS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033882263     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00693-4     Document Type: Article

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