Pulsed laser deposition of SiO2 thin films with dimethylpolysiloxane targets

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 3 A, 2002, Pages 1395-1399

  Okoshi, Masayuki ^a   Kuramatsu, Masaaki ^a   Inoue, Narumi ^a  

^a NATIONAL DEFENSE ACADEMY   (Japan)

Author keywords

ArF excimer laser; Dimethylpolysiloxane; Electrical insulation; Laser ablation; Oxygen gas; Pulsed laser deposition (PLD); Refractive index; Room temperature; SiO2 thin film; Transparency

Indexed keywords

ARGON; CHEMICAL BONDS; COMPOSITION EFFECTS; ELECTRIC CONDUCTIVITY; ELECTRIC INSULATION; EXCIMER LASERS; OXIDATION; PHOTODISSOCIATION; PRESSURE EFFECTS; PULSED LASER DEPOSITION; REFRACTIVE INDEX; SCANNING ELECTRON MICROSCOPY; SILICA; SILICONES; TARGETS; X RAY PHOTOELECTRON SPECTROSCOPY;

THIN FILM DEPOSITION;

THIN FILMS;

EID: 0036508941     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.1395     Document Type: Article

References (12)