Study of the Fourier-transform infrared spectra of InAs/GaAs quantum dot superlattices for far-infrared photodetectors

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 3 A, 2002, Pages 1386-1389

  Cheng, Yi Chang ^a,c   Yang, Ching Ming ^a   Lan, Wen How ^b   Yang, Jyh Neng ^c   Chang, Liann Be ^b  

^a MINGHSIN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^b CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY   (Taiwan)

^c NATIONAL DEFENSE UNIVERSITY   (Taiwan)

Author keywords

Atomic force microscopy (AFM); Far infrared photodetector; Fourier transform infrared (FTIR) spectrum; InAs; Quantum dots; Superlattice

Indexed keywords

ATOMIC FORCE MICROSCOPY; COMPOSITION EFFECTS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; INFRARED DETECTORS; MOLECULAR BEAM EPITAXY; SECONDARY ION MASS SPECTROMETRY; SELF ASSEMBLY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS; SILICON; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

FAR-INFRARED PHOTODETECTORS;

SEMICONDUCTOR SUPERLATTICES;

EID: 0036508837     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.1386     Document Type: Article

References (7)