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Journal of the Electrochemical Society

Volumn 149, Issue 3, 2002, Pages

Effects of oxygen partial pressure and annealing temperature on the formation of sputtered tungsten oxide films

(8) Bittencourt, C a Landers, R a Llobet, E b Molas, G b Correig, X b Silva, M A P c Sueiras, J E b Calderer, J d

a UNIVERSITY OF CAMPINAS (Brazil)

b UNIVERSITAT ROVIRA I VIRGILI (Spain)

c UNIVERSITY OF SÃO PAULO (Brazil)

d UNIVERSITAT POLITÈCNICA DE CATALUNYA (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; GRAIN BOUNDARIES; MORPHOLOGY; PARTIAL PRESSURE; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SPUTTER DEPOSITION; STOICHIOMETRY; SURFACE ROUGHNESS; THERMAL EFFECTS; X RAY PHOTOELECTRON SPECTROSCOPY;

OXYGEN PARTIAL PRESSURE; POST TREATMENT; RADIO FREQUENCY SPUTTERING; TUNGSTEN OXIDE FILMS;

TUNGSTEN COMPOUNDS;

EID: 0036504147 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.1448821 Document Type: Article

Times cited : (42)

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