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Volumn , Issue , 1996, Pages 615-617
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Role of silicon surface in the removal of point defects in ultra-shallow junctions
a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
ANNEALING;
ION IMPLANTATION;
POINT DEFECTS;
SEMICONDUCTOR JUNCTIONS;
TRANSMISSION ELECTRON MICROSCOPY;
ULTRA SHALLOW JUNCTIONS;
SEMICONDUCTING SILICON;
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EID: 0030348977
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (3)
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References (10)
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