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Semiconductor Science and Technology

Volumn 17, Issue 3, 2002, Pages 215-218

Interband impact ionization in THz-driven InAs/AlSb heterostructures

(5) Cao, J C a Lei, X L a,b Li, A Z a Qi, M a Liu, H C c

a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY (China)

b SHANGHAI JIAO TONG UNIVERSITY (China)

c INSTITUTE OF GEOLOGY AND GEOPHYSICS (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRANSPORT PROPERTIES; IMPACT IONIZATION; INTERFACES (MATERIALS); NUMERICAL ANALYSIS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS;

ALUMINUM ANTIMONY HETEROSTRUCTURES; INDIUM ARSENIDE HETEROSTRUCTURES; INTERBAND IMPACT IONIZATION; TERAHERTZ;

HETEROJUNCTIONS;

EID: 0036497276 PISSN: 02681242 EISSN: None Source Type: Journal
DOI: 10.1088/0268-1242/17/3/306 Document Type: Article

Times cited : (9)

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