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Volumn 47, Issue 1, 1998, Pages 6-10

Determination of HEMT's noise parameters versus temperature using two measurement methods

Author keywords

Characterization; HEMT; Low noise; Measurement; Microwave; Temperature

Indexed keywords

COMPUTER SIMULATION; MICROWAVES; SPURIOUS SIGNAL NOISE; TEMPERATURE;

EID: 0031988318     PISSN: 00189456     EISSN: None     Source Type: Journal    
DOI: 10.1109/19.728779     Document Type: Article
Times cited : (15)

References (8)
  • 1
    • 0028466069 scopus 로고
    • The determination of the noise, gain and scattering parameters of microwave transistors (HEMT's) using only an automatic noise figure test-set
    • July
    • G. Martines and M. Sannino, "The determination of the noise, gain and scattering parameters of microwave transistors (HEMT's) using only an automatic noise figure test-set," IEEE Trans. Microwave Theory Tech., vol. 42, pp. 1105-1113, July 1994.
    • (1994) IEEE Trans. Microwave Theory Tech. , vol.42 , pp. 1105-1113
    • Martines, G.1    Sannino, M.2
  • 2
    • 0027092244 scopus 로고
    • Direct extraction of all four transistor noise parameters from a single noise figure measurement
    • Helsinki, Finland, Aug.
    • P. Tasker, W. Reinert, J. Braunstein, and M. Schlechtweg, "Direct extraction of all four transistor noise parameters from a single noise figure measurement," in Proc. 22nd Eur. Microwave Conf., Helsinki, Finland, Aug. 1992, pp. 157-162.
    • (1992) Proc. 22nd Eur. Microwave Conf. , pp. 157-162
    • Tasker, P.1    Reinert, W.2    Braunstein, J.3    Schlechtweg, M.4
  • 3
    • 0043281980 scopus 로고    scopus 로고
    • Comparison between two measuring methods for complete characterization of low-noise HEMT's at microwaves
    • Prague, Czechoslovakia, Sept.
    • A. Caddemi, A. Di Paola, and M. Sannino, "Comparison between two measuring methods for complete characterization of low-noise HEMT's at microwaves," in Proc. 26th Eur. Microwave Conf., Prague, Czechoslovakia, Sept. 1996, pp. 186-190.
    • (1996) Proc. 26th Eur. Microwave Conf. , pp. 186-190
    • Caddemi, A.1    Di Paola, A.2    Sannino, M.3
  • 4
    • 11744368623 scopus 로고    scopus 로고
    • Full characterization of microwave low-noise HEMTs: Measurement vs. modeling
    • Apr.
    • _, "Full characterization of microwave low-noise HEMTs: Measurement vs. modeling," IEEE Trans. Instrum. Meas., vol. 46, pp. 1-5, Apr. 1997.
    • (1997) IEEE Trans. Instrum. Meas. , vol.46 , pp. 1-5
  • 5
    • 0024738288 scopus 로고
    • Modeling of noise parameters of MESFET's and MODFET's and their frequency and temperature dependence
    • Sept.
    • M. Pospieszalski, "Modeling of noise parameters of MESFET's and MODFET's and their frequency and temperature dependence," IEEE Trans. Microwave Theory Tech., vol. 37, pp. 1340-1350, Sept. 1989.
    • (1989) IEEE Trans. Microwave Theory Tech. , vol.37 , pp. 1340-1350
    • Pospieszalski, M.1
  • 8
    • 0029386415 scopus 로고
    • Determination of the RF-noise source parameters in AllnAs/GaInAs-HEMT heterostructures based on measured noise temperature dependence against electric field
    • Oct.
    • C. Bergamaschi, W. Patrick, and W. Baechtold, "Determination of the RF-noise source parameters in AllnAs/GaInAs-HEMT heterostructures based on measured noise temperature dependence against electric field," in IEE Proc. Circuits Devices Systems., Oct. 1995, vol. 142, pp. 339-344.
    • (1995) IEE Proc. Circuits Devices Systems , vol.142 , pp. 339-344
    • Bergamaschi, C.1    Patrick, W.2    Baechtold, W.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.