The perfection of space-grown GaSb studied by X-ray topography and high-resolution diffractometry

Journal of Crystal Growth

Volumn 236, Issue 4, 2002, Pages 501-510

  Voloshin, A E ^a   Lomov, A A ^a   Nishinaga, T ^b   Ge, P ^c   Huo, C ^c  

^a SHUBNIKOV INSTITUTE OF CRYSTALLOGRAPHY   (Russian Federation)

^b MEIJO UNIVERSITY   (Japan)

^c INSTITUTE OF PHYSICS   (China)

Author keywords

A1. Characterization; A1. High resolution X ray deffraction; A1. Line defects; A1. X ray topography; A2. Gradient freeze technique; A2. Microgravity condition; B2. Semiconducting III V materials

Indexed keywords

CRYSTAL GROWTH; CRYSTALLIZATION; SEMICONDUCTING GALLIUM COMPOUNDS; THERMAL STRESS; X RAY DIFFRACTION ANALYSIS;

CRYSTAL DIFFRACTOMETRY; TOPOGRAPHY;

SINGLE CRYSTALS;

EID: 0036494509     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)02200-X     Document Type: Article

References (6)