47 GHz VCO with low phase noise fabricated in a SiGe bipolar production technology

IEEE Microwave and Wireless Components Letters

Volumn 12, Issue 3, 2002, Pages 79-81

  Li, H ^a,b   Rein, H M ^a,b   Kreienkamp, R ^b   Klein, W ^c  

^a IEEE   (Germany)

^b RUHR UNIVERSITY BOCHUM   (Germany)

^c INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

Low phase noise VCO; Millimeter wave VCO; SiGe bipolar technology

Indexed keywords

LOW PHASE NOISE;

BIPOLAR INTEGRATED CIRCUITS; ELECTRIC POTENTIAL; FABRICATION; FREQUENCIES; MILLIMETER WAVE DEVICES; SPURIOUS SIGNAL NOISE; VARACTORS;

VARIABLE FREQUENCY OSCILLATORS;

EID: 0036493407     PISSN: 15311309     EISSN: None     Source Type: Journal    
DOI: 10.1109/7260.989857     Document Type: Article

References (6)

1. 38 GHz low phase noise CPW monolithic VCOs implemented in manufacturable AlInAs/InGaAs HBT IC technology
2. A 62 GHz monolithic InP-based HBT VCO
3. Design considerations for very-high-speed Si-bipolar IC's operating up to 50 Gb/s
4. SiGe regenerative frequency divider operating up to 63 GHz