Study of free GaAs surfaces using a back-gated undoped GaAs/AlGaAs heterostructure

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 13, Issue 2-4, 2002, Pages 663-666

  Kawaharazuka, A ^a   Saku, T ^a   Kikuchi, C A ^a   Horikoshi, Y ^a   Hirayama, Y ^a  

^a P D Inst F Festkorperelektronik   (Germany)

Author keywords

AlGaAs GaAs heterostructute; Frozen surface; Mid gap pinning; Surface state

Indexed keywords

ELECTRON GAS; ELECTRON TRANSPORT PROPERTIES; FERMI LEVEL; HIGH TEMPERATURE EFFECTS; LOW TEMPERATURE EFFECTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SURFACE CHEMISTRY;

FROZEN SURFACES;

HETEROJUNCTIONS;

EID: 0036493142     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(02)00253-9     Document Type: Conference Paper

References (8)