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Volumn 10, Issue 1-3, 2001, Pages 433-436
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Electronic and magnetoresistive properties of MnAs(0 0 0 1)/GaAs(1 1 1) heterostructures
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Author keywords
Electronic band structure calculations; Ferromagnet semiconductor heterostructure; Tunneling magnetoresistance
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Indexed keywords
BAND STRUCTURE;
FERROMAGNETIC MATERIALS;
MAGNETIC MOMENTS;
MAGNETORESISTANCE;
MONOLAYERS;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTING MANGANESE COMPOUNDS;
ATOMIC SPHERE APPROXIMATION;
TUNNELING MAGNETORESISTANCE;
HETEROJUNCTIONS;
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EID: 0035335409
PISSN: 13869477
EISSN: None
Source Type: Journal
DOI: 10.1016/S1386-9477(01)00132-1 Document Type: Article |
Times cited : (5)
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References (17)
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