Influence of the size of self-assembled InAs/AlAs quantum dots on photoluminescence and resonant tunneling

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 13, Issue 2-4, 2002, Pages 761-764

  Pierz, K ^a   Ma, Z ^a   Hapke Wurst, I ^b   Keyser, U F ^b   Zeitler, U ^b   Haug, R J ^b  

^a PHYSIKALISCH TECHNISCHE BUNDESANSTALT   (Germany)

^b LEIBNIZ UNIVERSITY HANNOVER   (Germany)

Author keywords

Atomic force microscopy; Photoluminescence; Resonant tunneling; Self assembled quantum dots; Single electron tunneling

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRIC POTENTIAL; GROUND STATE; MONOLAYERS; PHOTOLUMINESCENCE; RESONANT TUNNELING; SELF ASSEMBLY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS;

SELF-ASSEMBLED QUANTUM DOTS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0036492822     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(02)00277-1     Document Type: Article

References (9)